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Dr.D Nirmal

Karunya Institute of Technology and Sciences

Welcome

Dr. D. Nirmal is a Full Professor in the Department of Electronics and Communication Engineering and currently serves as Dean Academic Affairs, Associate Dean – Engineering and Technology at Karunya Institute of Technology and Sciences, India. He has been instrumental in leading academic reforms with a focus on outcome-based education, competency-driven curriculum architecture, and continuous outcome assessment systems, while also contributing to national-level accreditation frameworks and institutional quality enhancement initiatives.His research expertise spans physics-based modeling and TCAD simulation of advanced power semiconductor devices, Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), device design and fabrication, reliability and failure analysis, and system-level circuit integration. His work emphasizes predictive modeling for device performance optimization, electro-thermal effects, and long-term reliability assessment in wide-bandgap semiconductor technologies. Dr. Nirmal has attracted research funding amounting to ₹2.1Crores from premier Indian funding agencies including DRDO, ISRO, the Ministry of Electronics and Information Technology, and AICTE. He has also secured innovation-oriented grants for product development through industry and research collaborations with the IIT Tirupati Navavishkar I-Hub Foundation (IITTNiF) and Analog Devices India Pvt. Ltd. Dr. Nirmal is the founding Chair of the IEEE Electron Devices Society (EDS) Coimbatore Chapter and presently serves as the IEEE EDS Region 10 SRC Chair, contributing to strategic planning and student engagement across the Asia–Pacific region. In addition, he actively participates in several IEEE technical committees and serves as a technical committee member for the EDS Compound Semiconductor Devices and Circuits community.His contributions to semiconductor research and technical education have been widely recognized, including the IEI Young Engineer Award, the IETE Smt. Manorama Rathore Memorial Award (2022), and the Young Scientist Award (2019) from the Academy of Sciences.A prolific researcher and technologist, Dr. Nirmal has authored over 180 peer-reviewed publications and holds three patents. He is a Fellow of IETE and a Senior Member of IEEE, and is frequently invited as a keynote speaker at national and international technical forums, where he presents on emerging device technologies, reliability engineering, and advanced semiconductor system design.

Background

Dr. D. Nirmal is a Full Professor in the Department of Electronics and Communication Engineering and currently serves as Dean Academic Affairs, Associate Dean – Engineering and Technology at Karunya Institute of Technology and Sciences, India. He has been instrumental in leading academic reforms with a focus on outcome-based education, competency-driven curriculum architecture, and continuous outcome assessment systems, while also contributing to national-level accreditation frameworks and institutional quality enhancement initiatives.His research expertise spans physics-based modeling and TCAD simulation of advanced power semiconductor devices, Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), device design and fabrication, reliability and failure analysis, and system-level circuit integration. His work emphasizes predictive modeling for device performance optimization, electro-thermal effects, and long-term reliability assessment in wide-bandgap semiconductor technologies. Dr. Nirmal has attracted research funding amounting to ₹2.1Crores from premier Indian funding agencies including DRDO, ISRO, the Ministry of Electronics and Information Technology, and AICTE. He has also secured innovation-oriented grants for product development through industry and research collaborations with the IIT Tirupati Navavishkar I-Hub Foundation (IITTNiF) and Analog Devices India Pvt. Ltd. Dr. Nirmal is the founding Chair of the IEEE Electron Devices Society (EDS) Coimbatore Chapter and presently serves as the IEEE EDS Region 10 SRC Chair, contributing to strategic planning and student engagement across the Asia–Pacific region. In addition, he actively participates in several IEEE technical committees and serves as a technical committee member for the EDS Compound Semiconductor Devices and Circuits community.His contributions to semiconductor research and technical education have been widely recognized, including the IEI Young Engineer Award, the IETE Smt. Manorama Rathore Memorial Award (2022), and the Young Scientist Award (2019) from the Academy of Sciences.A prolific researcher and technologist, Dr. Nirmal has authored over 180 peer-reviewed publications and holds three patents. He is a Fellow of IETE and a Senior Member of IEEE, and is frequently invited as a keynote speaker at national and international technical forums, where he presents on emerging device technologies, reliability engineering, and advanced semiconductor system design.

Positions

  • Present 2020

    Professor

    Department of Electronics and Communication Engineering

    Karunya Institute of Technology and Sciences

    • 2020 2013

      Associate Professor

      Department of Electronics and Communication Engineering

      Karunya Institute of Technology and Sciences

      • 2013 2009

        Assistant Professor

        Department of Electronics and Communication Engineering

        Karunya University

      • 2009 2007

        Lecturer

        Electronics and communication Engineering Department

        Karunya University

        • Campus Life Experience

      • Present 2013

        Joint Chief Warden

        Mens Hostel

        Karunya Institute of Technology and Sciences

      • 2010 2007

        Warden

        Mens Hostel

        Karunya University

Education & Training

  • Ph.D. 2012

    Faculty of Information and Communication Engineering, Highly Commended

    (Specialisation in Nano Device Modelling) Anna University Chennai

  • PGDHE 2013

    Post Graduate Diploma in Higher Education

    Indira Gandhi National Open University

  • ME 2007

    Master of Engineering

    Specialization in VLSI Design)
    Karunya University , India.

  • BE 2005

    Electrical and Electronics Engineering

    Anna University

Honors & Awards

  • NAAC ASSESSOR, Government of India
  • R10 IEEE EDS SRC Chair
  • Received IETE Smt. Manorama Rathore memorial award 2022 from IETE.
  • Best Paper Award from Solid State Electronics Letters on January, 2021.
  • Karunya university Achievers Award 2019-2020 for obtaining funded project from AICTE.
  • Karunya university Achievers Award 2018-2019 for obtaining funded project from ISRO.
  • Young Achiever Award 2020 from Institution of Engineers, Coimbatore Chapter.
  • Certificate of recognition for publishing in IEEE journal from Madras Section 2020.
  • Received Best IEEE Volunteer Award 2020 from IEEE Madras Section.
  • Received Young Scientist Award 2019 from the Academy of Sciences, Chennai.
  • IEI Young Enginners Award - Electronics and Telecommunication Engineering - 2017.
  • Karunya University Achievers Award 2016-2017 for obtaining funded project from DRDO.
  • IEEE Madras Section Professional Achievement in the year 2016.
  • IEEE ED Coimbatore Chapter Chair.
  • Best Researcher Award from Karunya University in the year 2014.
  • Shir.P.K.Das Memorial Best Faculty Award in the Year 2013 by Nehru College of Educational and Charitable Trust.
  • Best Research Paper Award with high impact factor from Karunya University in the year 2012.
  • Received Shiksha Rattan Puraskar Award 2012 from Indian International friend ship Society.
  • Distinction in Master of Engineering (VLSI DESIGN).

    • Research Summary

    My research interest focus on Nanoelectronic device modelling ,simulation, fabrication, characterization, Optoelectronics devices, nanowires, novel transistor devices, electrical transport in low-dimensional systems and their circuit applications for future low power and high power applications.



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    Interests

    • Solid state devices
    • Junctionless transistors
    • FinFETs
    • HEMT
    • Digital VLSI
    • Analog VLSI
    • LED
    • MEMS
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      Subject Handled

      1. VLSI Design.
      2. Nanoelectronics.
      3. Solid State Device Modeling.
      4. Microelectronics.
      5. Solid State Electronics.
      6. Microwave and Optical Engineering.

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      Research Interest

      1. MOS insulators: Study of MOS insulators, including high-k dielectrics
      2. Novel MOS devices for ULSI applications: Transistors with high-k dielectrics

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      Scientific Experience

        Experience with Scientific Equipments:


        Techniques used extensivel:


      1. X-Ray Diffraction
      2. Impedance Spectroscopy
      3. SEM
      4. Raman spectroscopy
      5. UV Visible
      6. Material worked-Zirconium di oxide


        Technology Tools:


      1. TCAD(Technology computer aided design simulation tool)
      2. Sdevice
      3. Silvaco Atlas
      4. Inspect
      5. Tecplot
      6. Mentor graphics
      7. Tanner tool
      8. Synopsys


        Computer Language Skills:


      1. VHDL
      2. Verilog
      3. C++
      4. C Language

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      Review Assignment for Scientific Journals

      1. IEEE Electron Device Letter Golder reviewer – 2025.
      2. IEEE Transactions on Electron Devices Golder reviewer – 2025.
      3. AEÜ - International Journal of Electronics and Communications.
      4. Microelectronics Journal - Elsevier.
      5. Micro and Nanostructures - Elsevier.
      6. Solid State Electronics Letters- Elsevier.
      7. Scientific Reports - Nature.
      8. International journal of Microelectronics(MJS)Elsevier.
      9. International Journal Of Microelectronics Reliability Elsevier.
      10. International journal of Superlattices and Microstructures Elsevier.
      11. International Journal of Security (IJS).
      12. International journal computation intelligence and information security(IJCIIS).
      13. All IEEE Young Engineer's Humanitarian Challenge 2016-Jury member.

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      Editorial Member for Journals

      1. Editor-IEEE Electron Devices Letters
      2. Editor- Microelectronics Journal(Elsevier)
      3. Guest Editor - AEÜ - International Journal of Electronics and Communications
      4. Guest Editor - IEEE Trans on Nanotechnology
      5. Guest Editor - Materials Today: Proceedings
      6. Guest Editor - Computers & Electrical Engineering
      7. Editorial Board member of Journal of Semiconductor Devices and Circuits
      8. Editorial Board member of Journal of Solid State Electronics and Devices
      9. Editorial Board Member of Editorial Board Member of International Journal of Advanced Computer Research(IJACR)
      10. Editorial Board Member of International Journal of Scientific Engineering and Technology(IJSET)
      11. Editorial Board Member of International Journal of Electronics and Communications (Elsevier)Till January 2020

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      Universities Visited

      1. Universiti Sains, Malaysia.
      2. Nanyang Technical University, Singapore.
      3. IIT Bombay, India.
      4. IIT Chennai, India.
      5. Manipal University, India.
      6. Anna University, India.
      7. Indian Institute of Science,Bangalore, India.
      8. SRM University, India
      9. Bharathiar University, India.
      10. P.S.G Tech,Coimbatore, India.
      11. S.K.P Engineering college,Chennai, India.
      12. Noorl Islam University, India.

    Selected Publications

    The following is a list of selected publications. For a complete list please download my CV.

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    “ Research Publication in International Journals ”

    Professor D.Nirmal

    1. Kumar, V., Priyadharshni, R., Nirmal, D. and Balanethiram, S. Improving spike reliability of high-speed, energy-efficient TFET-based LIF neurons through Miller capacitance suppression (2026) Micro and Nanostructures, 208690 DOI:https://doi.org/10.1016/j.micrna.2026.208690(Impact Factor:3.0)
    2. Hinn, K.P.F., Michel, A., Jebalin IV, B.K., Wu, T.L., Samuel, T.A. and Nirmal, D. Drift Layer Engineering for Electric Field Management in Vertical Gallium Nitride Fin Field Effect Transistors for Power Electronic Applications (2026) physica status solidi (a), 223(7), e202500885 DOI:https://doi.org/10.1002/pssa.202500885(Impact Factor:1.9)
    3. Franklin, S.A., Jebalin, B.K., Chander, S., Rawal, D.S., Du John, H.V. and Nirmal, D. Demonstration of Fe‐Doped GaN Buffer HEMT to Achieve fMAX of 167 GHz (2025) physica status solidi (a), 222(24), e202500706 DOI:https://doi.org/10.1002/pssa.202500706(Impact Factor:1.9)
    4. Angen Franklin, S., Chander, S., Rawal, D.S., Victor Du John, H. and Nirmal, D. Optimization and High‐Frequency Performance Evaluation of AlGaN/GaN High‐Electron‐Mobility Transistors Aspect Ratio Scaling for Millimeter‐Wave Applications (2025) physica status solidi (a), 222(20), 2500251 DOI:https://doi.org/10.1002/pssa.202500251(Impact Factor:1.9)
    5. Justeena, A.N., Rajendiran, P., Mrabet, J., Ramasamy, S. and Nirmal, D. Investigation of Heavy-ion impact on Silicon Nanotube Tunnel FET SRAM (2025) Silicon,17(13),3157-3165 DOI:https://doi.org/10.1007/s12633-025-03389-2(Impact Factor:3.3)
    6. Gracia, D., Moni, D.J. and Nirmal, D. Optimisation of Ion/Ioff and transconductance of germanium based dual metal gate hetero-dielectric TFET (2025) Micro and Nanostructures,202,208128 DOI:https://doi.org/10.1016/j.micrna.2025.208128(Impact Factor:3.0)
    7. Repaka, L., Ajayan, J., Bhattacharya, S., Mounika, B., Akshaykranth, A. and Nirmal, D. A review of microelectronic AlGaN/GaN HEMT biosensors for the detection of various cancer diseases and bacterial/viral pathogens (2025) Microsystem Technologies, 31 (6), 1303-1318 DOI:https://doi.org/10.1007/s00542-024-05835-4(Impact Factor:1.6)
    8. Angelin Delighta, A., Raj Kumar, J.S., Binola K Jebalin, I.V. and Nirmal, D. Nanosheet transistors: materials, devices, systems and applications (2025) Journal of Materials Science, 222 (7), 1-38 DOI:https://doi.org/10.1007/s10853-025-10827-4(Impact Factor:3.5)
    9. Angen Franklin, S., IV, B.K.J., Chander, S., Juliet Rani, S. and Nirmal, D. 253 GHz fT Graded‐Channel AlGaN/GaN High‐Electron‐Mobility Transistors with New Cliff Barrier for Millimeter Wave High‐Frequency Applications (2025) physica status solidi (a), 222 (7), 2400552 DOI:https://doi.org/10.1002/pssa.202400552(Impact Factor:1.9)
    10. Deshpande, G., Ajayan, J., Bhattacharya, S., Mounika, B., Dwivedi, A.K. and Nirmal, D. Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communication systems (2025) Results in Engineering, 25, 104156 DOI:https://doi.org/10.1016/j.rineng.2025.104156(Impact Factor:7.9)
    11. Akshaykranth, A., Ajayan, J., Bhattacharya, S., Nirmal, D. Paramasivam, S., Gatto, G. and Kumar, A., Aggressively scaled T-Gated GaN-on-silicon RF power HEMT featuring step graded SRL-AlGaN buffer for next generation broad band power amplifiers (2025) Results in Engineering, 25, 104151 DOI:https://doi.org/10.1016/j.rineng.2025.104151(Impact Factor:7.9)
    12. Fletcher, A.A., Nirmal, D. Ajayan, J. and Murugapandiyan, P., OIs SiC a predominant technology for future high power electronics?: a critical review (2025) Current Nanoscience, 21(1), 37-51 DOI:https://doi.org/10.2174/0115734137268803231120111751(Impact Factor:1.4)
    13. Angen Franklin, S., Chander, S., Rawal, D.S., Victor Du John, H. and Nirmal, D. Optimization and High‐Frequency Performance Evaluation of AlGaN/GaN High‐Electron‐Mobility Transistors Aspect Ratio Scaling for Millimeter‐Wave Applications (2025) physica status solidi (a), 2500251 DOI:https://doi.org/10.1002/pssa.202500251(Impact Factor:1.9)
    14. Geege, A.S., Samuel, T.A., Vimala, P. and Nirmal, D. Label-free biomolecule detection with dielectrically modulated double gate single cavity InGaAs/GaAsSb HTFET: Design considerations and performance evaluation. (2024) Micro and Nanostructures, 196,207992 DOI:https://doi.org/10.1016/j.micrna.2024.207992(Impact Factor:3)
    15. Mounika, B., Ajayan, J., Bhattacharya, S., and Nirmal, D. Dwivedi, A.K., OLG= 50 nm T-gated and Fe-doped double quantum well GaN‒HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications (2024) Journal of Science: Advanced Materials and Devices, 9(4),100795 DOI:https://doi.org/10.1016/j.jsamd.2024.100795(Impact Factor:6.7)
    16. Shivaram, S., Paul, D.R., SK, S.B. and Johns, R., and Nirmal, D. Optimizing deposition parameters and characterizing TiO2 thin films for future memristor applications (2024) Physica Scripta, 99(11),115929 DOI:https://doi.org/10.1088/1402-4896/ad7aac(Impact Factor:2.6)
    17. Michel, A., IV, B.K.J., Franklin, S.A., Juliet Rani, S., A, A.D. and Nirmal, D. Influence of Doping Engineering in 1 μm Drift Layer Quasi‐Vertical Fin Field‐Effect Transistor for Achieving> 139 V Breakdown Voltage (2024) physica status solidi (a), 221(20),2400137 DOI:https://doi.org/10.1002/pssa.202400137(Impact Factor:1.9)
    18. Rajendiran, P., Justeena, A.N., Mrabet, J., Ramasamy, S., Selvam, P.D. and Nirmal, D. Sensitivity analysis of junctionless silicon NT-TFET and performance metrics comparison with the silicon NT-TFET (2024) Journal of Nanoparticle Research, 26(6),129 DOI:https://doi.org/10.1007/s11051-024-06045-9(Impact Factor:2.1)
    19. Dason, I.B.M., Kasthuri, N. and Nirmal, D. Influence of buffer layer engineering in MoS2/CIPS vdW NCFET logic transistor (2024) Physics Letters A, 523,129763 DOI:https://doi.org/10.1016/j.physleta.2024.129763(Impact Factor:2.3)
    20. Deshpande, G., Bhattacharya, S., Ajayan, J., Mounika, B. and Nirmal, D. A review of GaN channel-based MOSHEMTs for next-generation medium/low-voltage rating and high-speed RF power applications (2024) Journal of Electronic Materials, 53(8),4287-4307 DOI:https://doi.org/10.1007/s11664-024-11177-8(Impact Factor:1.993)
    21. Jebalin, I.B.K., Franklin, S.A. and Nirmal, D. Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone (2024) Microelectronics Journal, 147,106158 DOI:https://doi.org/10.1016/j.mejo.2024.106158(Impact Factor:1.993)
    22. Fletcher, A.A., Franklin, S.A., Murugapandiyan, P., Ajayan, J. and Nirmal, D. 4.87 kV SiC MOSFET Using HfSiO x/SiO2 Gate Dielectrics Combined with PN Pillars (2024) Journal of Electronic Materials, 53(5),2601-2608 DOI:https://doi.org/10.1007/s11664-024-11014-y (Impact Factor:2.1)
    23. Dason, I.B.M., Kasthuri, N. and Nirmal, D. TMD material investigation for a low hysteresis vdW NCFET logic transistor (2024) Semiconductor Science and Technology, 39(4),045005 DOI:https://doi.org/10.1088/1361-6641/ad2b09 (Impact Factor:1.9)
    24. Dhivyasri, G., Manikandan, M., Ajayan, J., Sreejith, S., Remya, R. and Nirmal, D. A comparative study of AlGaN and BAlGaN based ultraviolet quantum well-based light emitting diodes (2024) Optical and Quantum Electronics, 56(4),649 DOI:https://doi.org/10.1007/s11082-023-06270-x (Impact Factor:3.0)
    25. IV, B.K.J., Ajayan, J., Franklin, S.A. and Nirmal, D. A new vertical c-shaped silicon channel nanosheet FET with stacked high-k dielectrics for low power applications (2024) Silicon, 16(6),2659-2670 DOI:https://doi.org/10.1007/s12633-024-02871-7 (Impact Factor:3.4)
    26. Anushya, G., Benjamin, M., Sarika, R., Pravin, J.C., Sridevi, R. and Nirmal, D. A review on applications of molybdenum disulfide material: Recent developments (2024) Micro and Nanostructures, 186,207742 DOI:https://doi.org/10.1016/j.micrna.2023.207742 (Impact Factor:3.0)
    27. Gifta, G., Jebalin, I.B.K., Franklin, S.A., Rani, D.G.N. and Nirmal, D. Analytical Modelling and Simulation of Graphene Based Biosensor to Detect SARS-COV-2 from Aerosal Particles (2023) ECS Journal of Solid State Science and Technology, 12(5),057012 DOI:https://doi.org/10.1149/2162-8777/acd6b7 (Impact Factor:2.070)
    28. Mounika, B., Ajayan, J., Bhattacharya, S., Nirmal, D., Sreenivasulu, V.B. and Kumari, N.A., Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications (2023) Microelectronics Journal, 140, art. no. 105923 DOI:https://doi.org/10.1016/j.mejo.2023.105923 (Impact Factor:1.993)
    29. Jebalin, B.K., IV, Gifta, G., Angen, S., Prajoon, P., Nirmal, D. Investigation of variable field plate length in GaN HEMT on SiC substrate for MMIC applications(2023) Microelectronics Journal, 138, art. no. 105866 DOI:https://doi.org/10.1016/j.mejo.2023.105866 (Impact Factor:2.2)
    30. Ajayan, J., Mohankumar, P., Mathew, R., Thoutam, L.R., Kaushik, B.K., Nirmal, D. Organic Electrochemical Transistors (OECTs): Advancements and Exciting Prospects for Future Biosensing Applications(2023) IEEE Transactions on Electron Devices, pp. 1-12. DOI:https://doi.org/10.1109/TED.2023.3271960. (Impact Factor : 3.72)
    31. Ajayan, J., Mohankumar, P., Nirmal, D.,Tayal, S., Mounika, B. Ferroelectric Field Effect Transistors (FeFETs): Advancements, challenges and exciting prospects for next generation Non-Volatile Memory (NVM) applications(2023) Materials Today Communications, 2023, 35, 105591 DOI: https://doi.org/10.1016/j.mtcomm.2023.105591 (Impact Factor : 3.662)
    32. Angen Franklin, S., Binola K Jebalin, I.V., Chander, S., Ajayan, J., Nirmal, D. Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems (2023) ECS Journal of Solid State Science and Technology, 2023, 12(3), 035006 DOI:https://doi.org/10.1149/2162-8777/acc093 (Impact Factor : 2.070)
    33. Mukherjee, A., Debnath, P., Nirmal, D., Chanda, M. A new analytical modelling of 10 nm negative capacitance-double gate TFET with improved cross talk and miller effects in digital circuit applications(2023) Microelectronics Journal, 2023, 133, 105689 DOI:https://doi.org/10.1016/j.mejo.2023.105689 (Impact Factor : 1.992)
    34. Ajayan, J., Nirmal, D., Jebalin I.V, B.K., Sreejith, S. Advances in neuromorphic devices for the hardware implementation of neuromorphic computing systems for future artificial intelligence applications: A critical review(2022) Microelectronics Journal, 130, 105634 DOI:https://doi.org/10.1016/j.mejo.2022.105634. (Impact Factor : 1.992)
    35. Kumar, T.A., Rajakumar, G., Samuel, T.S.A., Nirmal, D. An In Situ Design/Analysis Method of Antimicrobial Effect Using Nano TiO2 for Disinfecting COVID-Affected Places (2022), Journal of Testing and Evaluation, 50 (5), DOI: https://dot.org/10.1520/JTE20220009. (Impact Factor : 1.264)
    36. Kumar, J.S.R., Nirmal, D., Hooda, M.K., Singh, S., Ajayan, J., Arivazhagan, L. Intensive Study of Field-Plated AlGaN/GaN HEMT on Silicon Substrate for High Power RF Applications (2022) Silicon, 14 (8), pp. 4277-4282. DOI: https://dot.org/10.1007/s12633-021-01199-w. (Impact Factor : 2.941)
    37. Mounika, B., Ajayan, J., Bhattacharya, S., Nirmal, D. Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review (2022) Micro and Nanostructures, 168, art. no. 207317, 1) DOI: https://dot.org/10.1016/j.micrna.2022.207317. (Impact Factor : 3.22)
    38. Ravindran, A., Nirmal, D., Jebalin. I. V, B.K., Pinkymol, K.P., Prajoon, P., Ajayan, J. InGaAs based gratings for UV–VIS spectrometer in prospective mRNA vaccine research (2022) Optical and Quantum Electronics, 54 (9), art. no. 555, DOI: https://dot.org/10.1007/s11082-022-04002-1. (Impact Factor : 2.794)
    39. Husna Hamza, K., Nirmal, D., Augustine Fletcher, A.S., Ajayan, J., Natarajan, R. Enhanced drain current and cut off frequency in AlGaN/GaN HEMT with BGaN back barrier (2022) Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 284, art. no. 115863, DOI: https://dot.org/10.1016/j.mseb.2022.115863 (Impact Factor : 3.407)
    40. Ajayan, J., Nirmal, D., Mohankumar, P., Mounika, B., Bhattacharya, S., Tayal, S., Fletcher, A.S.A. Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review ,(2022) Materials Science in Semiconductor Processing, DOI: https://dot.org/10.1016/j.mssp.2022.106982, (Impact Factor : 4.64)
    41. Kumar, J.S.R., Nirmal, D., Ajayan, J., Tayal, S. Investigation on LG = 50 nm Tapered T-Gated AlGaN/GaN HEMT on Silicon Wafer with a fT/fmax of 264/312 GHz for beyond 5G (B5G) Applications (2022) Silicon. DOI: 10.1007/s12633-022-01860-y (Impact Factor : 2.941)
    42. Fletcher, A.S.A., Nirmal, D., Arivazhagan, L., Ajayan, J., Raj, M.G., Hamza, K.H., Murugapandiyan,P., Natarajan, R. A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations (2022) Journal of Electronic Materials, 51 (3), pp. 1215-1225. DOI: https://dot.org/10.1007/s11664-021-09367-9 (Impact Factor : 2.047)
    43. Manikandan, M., Nirmal, D., Ajayan, J., Arivazhagan, L., Prajoon, P., Dhivyasri, G., Jagadeeswari, M.Physics based modeling of AlGaN/BGaN quantum well based ultra violet light emitting diodes (2022) Optical and Quantum Electronics, 54 (3), art. no. 168, DOI: https://dot.org/10.1007/s11082-022-03552-8 (Impact Factor : 2.794)
    44. Gracia, D., Nirmal, D., Moni, D.J. Analysis of nanoscale digital circuits using novel drain-gate underlap DMG hetero-dielectric TFET (2022) Microelectronics Journal. DOI: https://dot.org/10.1016/j.mejo.2021.105323 (Impact Factor : 1.992)
    45. Fletcher, A.S.A., Nirmal, D., Arivazhagan, L., Ajayan, J., Raj, M.G., Hamza, K.H., Murugapandiyan,P., Natarajan, R. A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations (2022) Journal of Electronic Materials. DOI: https://dot.org/10.1007/s11664-021-09367-9 (Impact Factor : 2.047)
    46. Godfrey, D., Nirmal D., Arivazhagan, L., Godwinraj, D., Mohan Kumar, N., Chen, Y., Yeh, W. Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate (2021) Microelectronics Journal. DOI: https://dot.org/10.1016/j.mejo.2021.105293 (Impact Factor : 1.992)
    47. Arivazhagan, L., Nirmal, D., Jarndal, A., Huq, H.F., Chander, S., Bhagyalakshmi, S., Reddy, P.K.,Ajayan, J., Varghese, A.Applicability of double Channel Technique in AlGaN/GaN HEMT for future biosensing applications (2021) Superlattices and Microstructures. (Impact Factor : 3.12)
    48. Ajayan, J., Ravichandran, T., Mohankumar, P., Prajoon, P., Charles Pravin, J., D. Nirmal “Investigation of RF and DC Performance of E-Mode In0.80Ga0.20As/InAs/In0.80Ga0.20as Channel based DG-HEMTs for Future Submillimetre Wave and THz Applications” (2021) IETE Journal of Research, 67 (3), pp. 366-376. DOI: https://dot.org/10.1080/03772063.2018.1553641 (Impact Factor : 2.33)
    49. Fletcher, A.S.A., D. Nirmal, Ajayan, J., Arivazhagan, L., Hamza, K.H., Murugapandiyan, P. “60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites” (2021) Silicon, DOI: https://dot.org/10.1007/s12633-021-01367-y (Impact Factor : 2.941)
    50. Sathishkumar, M., Samuel, T.S.A., Vimala, P., D. Nirmal. “Performance Analysis of HfO2-SiO2 Stacked Oxide Quadruple Gate Tunnel Field Effect Transistor for Improved ON Current” (2021) Silicon, DOI: https://dot.org/10.1007/s12633-021-01394-9 (Impact Factor : 2.941)
    51. Sam, D.S.S., Moni, D.J., Paul, P.S., D. Nirmal. “A Novel Architecture for 10-bit 40MSPS Low Power Pipelined ADC Using a Simultaneous Capacitor and Op-amp Sharing Technique” (2021) Silicon, DOI: https://dot.org/10.1007/s12633-021-01241-x, (Impact Factor : 2.941)
    52. Murugapandiyan, P., Hasan, M.T., Rajya Lakshmi, V., Wasim, M., Ajayan, J., Ramkumar, N., D. Nirmal. “Breakdown voltage enhancement of gate field plate Al0.295Ga0.705N/GaN HEMTs” (2021) International Journal of Electronics, 108 (8), pp. 1273-1287, DOI: https://dot.org/10.1080/00207217.2020.1849819 (Impact Factor : 1.457)
    53. Murugapandiyan, P., D. Nirmal, Tanvir Hasan, M., Varghese, A., Ajayan, J., Augustine Fletcher, A.S., Ramkumar, N., “Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study” (2021) Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 273, DOI: https://dot.org/10.1016/j.mseb.2021.115449, (Impact Factor: 3.407 )
    54. J.Ajayan D. Nirmal, R.Ramesh, Sandip Bhattacharyaa, Shubham TayalaL.M.I, .Leo Joseph Laxman. Raju Thoutama D.Ajitha,power “A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications” 2021, Measurements, https://doi.org/10.1016/j.measurement.2021.110100 , (Impact Factor:5.131 )
    55. Sridevi, R., Pravin, J.C., Babu, A.R., D. Nirmal “Investigation of Quantum Confinement Effects on Molybdenum Disulfide (MoS2) Based Transistor Using Ritz Galerkin Finite Element Technique” (2021) Silicon DOI: https://dot.org/10.1007/s12633-021-01010-w, (Impact Factor:2.941 )
    56. Tayal, S., Ajayan, J., Joseph, L.M.I.L., Tarunkumar, J., D. Nirmal, Jena, B., Nandi, A. “A Comprehensive Investigation of Vertically Stacked Silicon Nanosheet Field Effect Transistors: an Analog/RF Perspective” (2021) Silicon, DOI: https://dot.org/10.1007/s12633-021-01128-x (Impact Factor:2.941 )
    57. Anvarifard, M.K., D. Nirmal “Creation of Step-Shaped Energy Band in a Novel Double-Gate GNRFET to Diminish Ambipolar Conduction” (2021), IEEE Transactions on Electron Devices, DOI: https://dot.org/10.1109/TED.2021.3069442, (Impact Factor:3.221 )
    58. Ajayan, J., D. Nirmal., Tayal, S., Bhattacharya, S., Arivazhagan, L., Fletcher, A.S.A., Murugapandiyan, P., Ajitha, D., “Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study” (2021), Microelectronics Journal, DOI: https://doi.org/10.1016/j.mejo.2021.105141, (Impact Factor:1.992 )
    59. Husna Hamza, K., D. Nirmal, Augustine Fletcher, A.S., Arivazhagan, L., Ajayan, J., Natarajan, R., “Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm” (2021) AEU - International Journal of Electronics and Communications, DOI: https://doi.org/10.1016/j.aeue.2021.153774 (Impact Factor:3.169 )
    60. Ajayan J., D. Nirmal Mathew R, Arivazhagan L, Ajitha D, "A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications",Materials Science in Semiconductor Processing, https://doi.org/10.1016/j.mssp.2021.105753, 2021, 128, 105753(Impact factor:4.644)
    61. Arivazhagan L, Jarndal A, D. Nirmal "GaN HEMT on Si substrate with diamond heat spreader for high power applications",Silicon, Journal of Computational Electronics, 2021, : DoI: 10.1007/s10825-020-01646-8 (Impact factor:1.983)
    62. Ravindran A, D. Nirmal Prajoon P, Gracia Nirmala Rani D "Optical Grating Techniques for MEMS-Based Spectrometer-A Review", IEEE Sensors Journal, 2021, 21(5), pp. 5645–5655, 9272803, DoI: 10.1109/JSEN.2020.3041196 (Impact factor:4.325)
    63. Murugapandiyan P, D. Nirmal Ajayan J, Varghese A, "Investigation of Influence of SiN and SiO2 Passivation in Gate Field Plate Double Heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N High Electron Mobility Transistors, Ramkumar, N., 2021" Silicon, DOI: 10.1007/s12633-020-00503-4(2020). (Impact factor:2.941)
    64. Arivazhagan L, D. Nirmal Reddy, P. P. K., Ajayan J., Godfrey D., Prajoon P & Ray A "A Numerical Investigation of Heat Suppression in HEMT for Power Electronics Application",Silicon, DOI: 10.1007/s12633-020-00647-3)(Impact factor:2.941)
    65. Manikandan M, D. Nirmal Ajayan J, Prajoon P, Dhivyasri G. "Numerical investigation of traps and optical response in III-V nitride quantum LED, Optical and Quantum Electronics",2020, 52(12), 513, Optical and Quantum Electronics ( IF 1.842 ) Pub Date : 2020-11-22, DOI: 10.1007/s11082-020-02633-w, (Impact factor:2.794)
    66. Arivazhagan L, D. Nirmal Chander S, Rajkumar J.S, Bhagya Lakshmi S, "Variable thermal resistance model of GaN-on-SiC with substrate scalability",Journal of Computational Electronics, 2020, 19(4), pp. 1546–1554, DoI: https://doi.org/10.1007/s10825-020-01561-y (Impact factor:1.983)
    67. Anwar Jarndal L, Arivazhagan, D. Nirmal "On the performance of GaN-on-Silicon, Silicon-Carbide,and Diamond substrates",Silicon, International Journal of RF and Microwave Computer-Aided Engineering, 2020, 30(6), e22196(Impact factor:1.987)
    68. S. Manikandan1, N. B. Balamurugan1, D. Nirmal "Analytical Model of Double Gate Stacked Oxide JunctionlessTransistor Considering Source/Drain Depletion Effects for CMOS LowPower Applications",Silicon, DOI: https://doi.org/10.1007/s12633-019-00280-9 (Impact factor:2.941)
    69. D.Godfrey, D. Nirmal D. Godwinraj L. Arivazhagan,N.Mohankumar,J.Tzou and W.K.Yeh "Enhancement of DC and Breakdown Performance on Single to Multi-Step Gate FP Using GaN-HEMT for High Power Applications",Silicon, DOI: 10.1007/s12633-020-00503-4 (2020)(Impact factor:2.941)
    70. A.S. Augustine Fletcher, D. Nirmal L. Arivazhagan and J. Ajayan, "An Intensive Study on Assorted Substrates Suitable for High JFOM AlGaN/GaN HEMT",Silicon, DOI: 10.1007/s12633-020-00549-4 (2020)(Impact factor: 2.941)
    71. J.Ajayan, D. Nirmal P.Mohankumar, M.Saravanan, M.Jagadesh and L.Arivazhagan, "A review of photovoltaic performance of organic/inorganic solar cells for future renewable and sustainable energy technologies",Superlattices and Microstructures, https://doi.org/ 10.1016/j.spmi.2020. 106549, (2020) pp 1-53 (Impact Factor:2.658)
    72. K.Husna Hamza andD. Nirmal"A review of GaN HEMT broadband power amplifiers",International Journal of Electronics and Communications (AEU), Vol 116, (2020) DOI: 10.1016/j.aeue.2019.153040(Impact factor: 3.169)
    73. D.Godfrey,D. NirmalL. Arivazhagan, R.Rathes kannan, P.Issac Nelson, S.Rajesh, B.Vidhya and N.Mohankumar “ A novel ZnPc nanorod derived piezoelectric nanogenerator for energy harvesting”Physica E Vol.118 (2020)(Impact factor: 3.369)
    74. S.Angen, J. Grace jency and D. Nirmal“A wearable energy storage capacitor using graphene oxide and magnesuim oxide as electrodes”Physica E 115 (2020)(Impact factor: 3.369)
    75. A.S. Augustine Fletcher,D. NirmalL. Arivazhagan, J. Ajayan and Varghese, A, " Enhancement of Johnson figure of merit in III-V HEMT combined with discrete field plate and AlGaN blocking layer", International Journal of RF and Microwave Computer-Aided Engineering,vol 30, Issue 2(2020).(Impact factor: 1.987)
    76. Rani, C.S.H., Bagan, K.B.,D. Nirmaland Roach, R.S., “ Enhancement of Performance in TFET by Reducing High-K Dielectric Length and Drain Electrode Thickness” Silicondoi:10.1007/s12633-019-00328-w (2019)(Impact factor: 2.941)
    77. M.Manikandan,D. NirmalJ.Ajayan, P.Mohankumar, P.Prajoon and L.Arivazhagan “A review of blue light emitting diodes for future solid state lighting and visible light communication applications”, Superlattices and Microstructures 136 (2019)., https://doi.org/ 10.1016/j.spmi. 2019.106294,(Impact factor: 2.658)
    78. J.Ajayan,D. NirmalDheena Kurian, P.Mohankumar, L.Arivazhagan , A.S. Augustine Fletcher ,T.D.Subash and M.Saravanan“ Investigation of impact of gate underlap/overlap on the analog/RF performance of composite channel double gate MOSFETs” Journal of Vacuum Science & Technology, B 37, 062201 (2019); https://doi.org/10.1116/1.5116199(Impact factor: 2.427)
    79. J.Ajayan,D. NirmalP.Mohankumar, Dheena Kurian, A.S. Augustine Fletcher , L.Arivazhan and B.Santhosh kumar“ GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review”Microelectronics journal, https://doi.org/10.1016/j.mejo.2019.104604 Vol 108, (2019)(Impact factor: 1.992)
    80. J.Ajayan,D. NirmalP.Mohankumar, and L.Arivazhan, “ Investigation of Impact of Passivation Materials on the DC/RF Performances of InP-HEMTs for Terahertz Sensing and Imaging”Silicon, doi.org/10.1007/s12633-019-00226-1 (2019) pp 1-6(Impact factor: 2.941)
    81. L. Arivazhagan,D. NirmalD.Godfrey, J. Ajayan, P.Prajoon A.S. Augustine Fletcher, A.Amir Anton Jone and J.S.Raj Kumar, "Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications",International Journal of Electronics and Communications (AEU), Vol 108, (2019) Pg 189-194.(Impact factor: 3.169)
    82. A.S. Augustine Fletcher, D. Nirmal and L. Arivazhagan, "Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications",International Journal of Electronics and Communications (AEU), Vol 99, (2019) Pg 325-330(Impact factor: 3.169)
    83. Suresh Subramanian, B. Sundarambal and D. Nirmal "Investigation on Simulation-Based Specific Absorption Rate in Ultra-Wideband Antenna for Breast Cancer Detection",IEEE Sensors Journal Vol 18 No.24, 20 Dec 2018(Impact factor: 4.325)
    84. D. Gracia D. Nirmal and D. Jackuline Moni, "Impact of Leakage Current in Germanium Channel based DMDG TFET using Drain-gate underlap technique"International Journal of Electronics and Communications (AEU), Vol 96, (2019) Pg 164-169(Impact factor: 3.169)
    85. P. Vanitha, T.S. Arun Samuel and D. Nirmal "A New 2D Mathematical Modeling of Surrounding Gate Triple material Tunnel FET using Halo Engineering for Enhanced Drain Current"International Journal of Electronics and Communications (AEU), Vol 99, (2019) Pg 34-39.(Impact factor: 3.169)
    86. J.Ajayan, T.Ravichandran, P.Mohankumar, P.Prajoon, J.Charles Pravin andD. Nirmal “Investigation of DC and RF Performance of Novel MOSHEMT on Silicon Substrate for Future Submillimeter Wave Applications” Semiconductors vol. 52,No.16,(2018) pp 1191-1997(Impact factor: 0.672)
    87. R.Ratheskumar,P.Isaac Nelson, S.Rajesh, T.Ponmudi selvi, A.Mohan , B.Vidhya, D. Nirmal and Arivazhan, “Curtailed recombination rate and fast carrier transport in ZnPc/Ga As/ Zn Pc Stacked hybrid structure” Optical Materials vol. 85,(2018) pp 287-294 (Impact factor: 2.320)
    88. D.GraciaD. Nirmal and D.Jackuline Moni, “ Impact of leakage current in germanium channel based DMDG TFET using drain- gate underlap technique" International Journal of Electronics and Communications (AEÜ), vol.96,(2018) pp 164-169 (Impact factor: 2.115)
    89. J. Ajayan and D. Nirmal, “InP high electron mobility transistors for submillimeter wave and terahertz frequency applications: A review” International Journal of Electronics and Communications (AEÜ) vol.94,(2018) pp 199-214 (Impact factor: 2.115)
    90. J. Hengsteler and D. Nirmal, “Analysis of High Efficiency InGaN Multiple-Quantum-Well Light-Emitting-Diodes Using InGaN Step-Graded Barriers” Journal of Nanoelectronics and Optoelectronics vol.13,(2018) pp 939-943 (Impact factor: 1.019)
    91. J. Ajayan and D. Nirmal, “Investigation of breakdown performance in $$ L_ {g} $$= 20 nm novel asymmetric InP HEMTs for future high-speed high-power applications” Journal of Computational Electronics vol.17,(2018) pp 265-2723 (Impact factor: 1.431)
    92. J. Ajayan and D. Nirmal, “Investigation of DC-RF and breakdown behaviour in Lg = 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications” International Journal of Electronics and Communications (AEÜ) vol.84,(2018) pp 387-393 (Impact factor: 2.115)
    93. J. Charles Pravin and D. Nirmal, “Nanoscale High-k Dielectrics for Junctionless Nanowire Transistor for Drain Current Analysis” Journal of ELECTRONIC MATERIALS https://doi.org/10.1007/s11664-018-6075-2 (Impact factor: 1.573)
    94. P. Prajoon and D. Nirmal, “Investigation of efficiency enhancement in InGaN MQW LED with compositionally step graded GaN/InAlN/GaN multi-layer barrier” Superlattices and Microstructures DOI:10.1016/j.spmi.2018.02.008 (Impact factor: 2.123)
    95. D. Nirmal and Arivazhagan, “Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application” Superlattices and Microstructures https://doi.org/10.1016/j.spmi.2017.12.027 (Impact factor: 2.123) 2.123)
    96. J. Ajayan and D. Nirmal, “Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications”, International Journal of Electronics and Communications (AEÜ vol.79,(2017)pp 151-157. (Impact factor: 1.147)
    97. A.S. Augustine Fletcher and D. Nirmal, “A survey of Galliaum Nitride HEMT for RF and highpower applications", Superlattices and Microstructures DOI: 10.1016/j.spmi.2017.05.042,2017. (Impact factor: 2.123)
    98. P. Murugapandiyan and D. Nirmal, “DC and microwave characteristics of 20 nm T-gate InAlN/GaN high electron mobility transistor for high power RF applications", Superlattices and Microstructures DOI: 10.1016/j.spmi.2017.05.060,2017. (Impact factor: 2.123)
    99. D. Gracia and D. Nirmal, “Investigation of Ge based Double Gate Dual Metal Tunnel FET Novel Architecture using Various Hetero dielectric Materials", Superlattices and Microstructures DOI: 10.1016/j.spmi.2017.04.045,2017. (Impact factor: 2.123)
    100. J. Ajayan and D. Nirmal, “20 nm In 0.75 Ga0.25 As channel-based HEMTs on Inp/GaAs substrates for future THz applications ", Journal of semiconductors Vol 38, No.4(2017)pp1-6 (Impact factor:)
    101. Charles Pravin and D. Nirmal, “Investigation of 6T SRAM memory circuits using high-k dielectrics based nano scale junctionless transistor ", Superlattices and Microstructures DOI: 10.1016/j.spmi.2017.03.012,2017. (Impact factor: 2.117)
    102. J. Ajayan and D. Nirmal, “20 nm high performance enhancement mode InP HEMT with heavily doped S/D regions for future THz applications ", Superlattices and Microstructures DOI: 10.1016/j.spmi.2016.10.011,2016. (Impact factor: 2.117)
    103. P.Prajoon, D. Nirmal, Anuja Menokey and J.Charlespravin, “Temperature dependant efficiency droop analysis of In GaN MQW light emitting diode with modified ABC model.”, J Comput Electron , 10.1007/s10825-016-0904-4, (2016). (Impact factor – 1.104)
    104. J. Ajayan and D. Nirmal, “20-nm enhancement-mode metamorphic HEMT with highly doped InGaAs source/drain regions for high frequency applications" International Journal of Electronics DOI: 10.1080/00207217.2016.1218066,2016. (Impact factor:0.414)
    105. J. Ajayan and D. Nirmal, “20-nm T-gate composite channel enhancement-mode metamorphic HEMT on GaAs substrates for future THz applications" J Comput Electron DOI: 10.1007/s10825-016-0884-4, 2016. (Impact factor:1.104)
    106. Charles Pravin J, D.Nirmal , Prajoon P and Anuja Menokey M., “A New Drain Current Model for Dual Metal Junctionless Transistor for Enhanced Digital Circuit Performance” IEEE Trans. Electron Devices, VOL. 63, NO. 9 pp 3782-3789. (Impact Factor – 2.207).
    107. Prajoon P, D.Nirmal, AnujaMenokey M, J Charles Pravin “Efficiency Enhancement of InGaN MQW LED Using Compositionally Step Graded InGaN Barrier on SiC Substrate” Accepted in IEEE J. Display Technology, DOI: 10.1109/JDT.2016.2570814, (2016). (Impact Factor – 1.925).
    108. P.Prajoon, D .Nirmal, AnujaMenokey and J.Charlespravin, “A Modified ABC Model in InGaN MQW LED Using Compositionally Step Graded Alternating Barrier for Efficiency Improvement”, Superlattices and Microstructures, 96 (2016) 155-163. (Impact factor – 2.097).
    109. J. Charles Pravin, D.Nirmal, P. Prajoon and J. Ajayan, “Implementation of nanoscale circuits using dual metal gate engineered Nanowire MOSFET with high-k dielectrics for low power applications” Physica E 83 (2016) 95–100. (Impact Factor: 2.00).
    110. J. Ajayan and D. Nirmal, “A review of InP/InAlAs/InGaAs based transistors for high frequency applications" Superlattices and Microstructures 86 (2015) 1–19. (Impact factor: 2.097)
    111. Binola k Jebalin, Shobha Rekh, Prajoon, N.Mohankumar and D.Nirmal “The influence of high-k passivation layer on breakdown voltage of schottky AlGaN/GaN HEMTs” Microelectronics Journal.doi:10.1016/j.mejo.2015.04.006. (Impact factor: 0.924)
    112. B. Padmanaban, R. Ramesh, D. Nirmal and S. Sathiyamoorthy “Numerical modeling of triple material gate stack gate all-around (TMGSGAA) MOSFET considering quantum mechanical effects” Superlattices and Microstructures 82 (2015) 40–54.(Impact factor: 1.979)
    113. Binola k Jebalin, Shobha Rekh, Prajoon, Godwin raj, N.Mohankumar and D.Nirmal “Unique model of polarization engineered AlGaN/GaN Based HEMTs for high power applications” superlattices and Microstructures 78(2015)210-223.(Impact factor: 1.979)
    114. D.Nirmal, P.VijaKumar, K.shruthi, Binola K jebalin and Mohan Kumar “ A review of Nanoscale channel and Gate Engineered FINFETS for VLSI mixed signal applications using Zirconium – di- oxide dielectrics” Journal of Engineering sciences and Technology Review Volume7(2) 2014, 119-124.
    115. I.Flavia Princess Nesamani, V.Lakshmi Prabha,Aswathy Paul and D.Nirmal, Synthesis and Dielctric Studies of Monoclinic Nanosized Zirconia”, International journal of Advances in Condensed Matter Physics. (Hindawi)Volume 2014. ( Impact Factor: 1.175).
    116. D.Nirmal, Vijayakumar .P, Shruthi and Mohan Kumar .N “Nanoscale Channel Engineered Double Gate MOSFET for Mixed Signal Applications using High-k Dielectric”, International journal of circuit theory and applications. (Wiley)Voiume 41, Issue 6, pp 608-618,2013. ( Impact Factor: 1.759).
    117. D.Nirmal, Vijayakumar .P, Patrick Chella Samuel , Binola k Jebalin, and Mohan Kumar .N “Subthreshold analysis of nanoscale FinFETs for ultra low power application using high-k materials”, International Journal of Electronics.(Taylor and Francis) Volume 100, Issue 6,pp 803-817,2013. (Impact factor: 0.440).
    118. D.Nirmal, Vijayakumar .P, Divya .D , Binola k Jebalin, and Mohan Kumar .N “Subthreshold Performance of Gate Engineered FinFET Devices and circuit with High-k Dielectrics”, Microelectronics Reliability(Elsevier) 53 (2013) 499–504. (Impact factor: 1.167).
    119. D.Nirmal , Nalini .B and Cyril Robinson Azariah “ Fabrication and Characteristics of Flexible Thin Film Depletion Mode Field Effect Transistor (FET) using High-κ Dielectric Nano Zirconia” International Journal of Emerging Trends in Engineering and Development, Issue 3, Vol.2 pp.295-299. (March 2013).
    120. D.Nirmal , Nalini .B and Cyril Robinson Azariah “ Fabrication and Characteristics of Flexible Thin Film Depletion Mode Field Effect Transistor (FET) using High-κ Dielectric Nano Zirconia” International Journal of Emerging Trends in Engineering and Development, Issue 3, Vol.2 pp.295-299. (March 2013).
    121. Surya A ,D.Nirmal et al “CMOS Based Instrumentation Amplifier For Neural Recording System” IJCIC Volume5, Issue 1,pp 51-55,2013.
    122. D.Nirmal and Vijayakumar .P “Fin Field Effect Transistors Performance in Analog and RF for High-k Dielectrics” Defence Science Journal, Vol. 61, No. 3, pp. 235-240, May 2011. (Impact factor:0.304)
    123. D.Nirmal , Shruti .K, Divya Mary Thomas, Patrick Chella Samuel, Vijayakumar .P and Mohan Kumar .N “Impact of Channel Engineering on FINFETs using High-k dielectrics” International Journal of Micro and Nano Electronics, Circuits and Systems, 3(1), pp. 7-11, 2011.
    124. D.Nirmal , Nalini .B and Vijayakumar .P “Nano sized High K Dielectric Material for FINFET”, Integrated Ferroelectrics(Taylor and Francis), Volume 121, Issue 1, pp. 31 – 35, 2010.(Impact Factor: 0.264)
    125. D.Nirmal , Vijayakumar .P and Sam Jebaraj “NAND Gate Using FINFET for Nanoscale technology”, International Journal of Engineering Science and Technology Vol.2 (5), pp. 1351-1358, 2010.
    126. D.Nirmal and Vijayakumar .P “Gate Engineering on the Analog Performance of DM-DG MOSFETs with High K Dielectrics”, International Journal of Advanced Science and Technology Vol. 25, pp. 1-6, December, 2010.

    “ Research Publications in International Conference ”

    Professor D.Nirmal

    1. Kumar, A., Logisvary, V., IV, B.K.J. and Nirmal, D., “ Charge-Plasma Induced Intrinsic Channel SOI TriGate MOSFET: Device Realization and Evaluation” 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) 2026 - Proceedings, 2026, pp. 564-569 DOI:https://doi.org/10.1109/EDTM65772.2026.11497859.
    2. Delighta, A, IV, B.K.J, Michel, A. and Nirmal, D., “ Demonstration of Novel Multi-Channel Vertical C-Shaped Nanosheet FET with fT of 352 GHz for Low-Power RF Circuits” 5th International Conference on Communication, Computing and Electronics Systems (ICCCES) 2026 - Proceedings, 2026, pp. 564-569 DOI:https://doi.org/10.1109/ICCCES62661.2026.11436405.
    3. Franklin, S.A., Chander, S. and Nirmal, D., “ Enhanced RF performance on Graded-channel AlGaN/GaN HEMTs with Aerogel-Cavity for 6G Applications” IEEE Microwaves, Antennas, and Propagation Conference, MAPCON 2024 - Proceedings, 2024, pp. 1-4 DOI:https://doi.org/10.1109/MAPCON61407.2024.10923132.
    4. Mongia, D., Chander, S. and Nirmal, D., “Parameter Extraction for Large Periphery Indigenous AlGaN/GaN HEMT Device” 7th International Conference on Devices, Circuits and Systems, ICDCS 2024 - Proceedings, 2024, pp. 221-223 DOI:https://doi.org/10.1109/ICDCS59278.2024.10560490.
    5. Franklin, S.A., Chander, S. and Nirmal, D., “Enhancing Reliability and RF Performance: The Impact of Fe Doped Back Barrier Optimization in GaN HEMTs” 7th International Conference on Devices, Circuits and Systems, ICDCS 2024 - Proceedings, 2024, pp. 258-261 DOI:https://doi.org/10.1109/ICDCS59278.2024.10560498.
    6. IV, B.K.J., Michel, A. and Nirmal, D., “Investigations on Novel Dual Metal Gate-Vertical C-Channel Nanosheet FET with f T of 268 GHz for Beyond 5G Application” IEEE International Conference of Electron Devices Society Kolkata Chapter, EDKCON 2024 - Proceedings, 2024, pp. 01-06 DOI:https://doi.org/10.1109/EDKCON62339.2024.10870830.
    7. Michel, A., IV, B.K.J., George, N.M. and Nirmal, D., “Quasi Vertical FinFET with Step Graded Doping for Obtaining 0.037 mΩ. cm 2 ON Resistance” IEEE International Conference of Electron Devices Society Kolkata Chapter, EDKCON 2024 - Proceedings, 2024, pp. 353-357 DOI:https://doi.org/10.1109/EDKCON62339.2024.10870763.
    8. Kumar, J.R., Nirmal, D., John, H.V.D. and Jebalin, K.B., “Investigations of ScAlN/AlGaN split barrier inspired high electron mobility transistor” AIP Conference Proceedings, ICCES 2023 - Proceedings, 2023,2901(1), pp. 080018 DOI:https://doi.org/10.1063/5.0186920.
    9. Navya, V.S., Du John, H.V., Kumar, J.R., Franklin, A. and Nirmal, D., “Simulation Study of Stacked Oxide Layer NCFET for RF Applications” 8th International Conference on Communication and Electronics Systems, ICCES 2023 - Proceedings, 2023, pp. 90-94 DOI:https://doi.org/10.1109/ICCES57224.2023.10192892.
    10. Ravindran, A., Nirmal, D., Jebalin I. V, B.K., Ajayan, J., Prajoon, P. “Investigation on Impact of GaAs and GaN Blazed Grating for High Performance UV-VIS Spectrometer” 3rd International Conference on Electronics and Sustainable Communication Systems, ICESC 2022 - Proceedings, 2022, pp. 1326–1332 DOI:10.1109/ICESC54411.2022.9885635.
    11. Kumar, J.S.R., Nirmal, D., Du John, H.V., Angen Franklin, S., Samuel, G. “Design and Simulation of a T-gated AlGaN/GaN HEMT with Added Mini Field Plate” 3rd International Conference on Electronics and Sustainable Communication Systems, ICESC 2022 - Proceedings, 2022, pp. 303–306 DOI: 10.1109/ICESC54411.2022.9885639.
    12. Micheal Snow., J., Nirmal, D., Samuel, G., Khausik., S., John, H.V.D. Investigation of GdO/α-GaO/YO Based Moshemt for Drain Current Improvement (2022) ICDCS 2022 - 2022 6th International Conference on Devices, Circuits and Systems, pp. 489-493. DOI: 10.1109/ICDCS54290.2022.9780822
    13. Dhivyasri, G., Nirmal, D., Manikandan, M., Gokiladeepa, G., Ajayan, J., Menagadevi, M. Simulation and Comparison of AlGaN LEDs with Boron Doped GaN Well Using Assorted Aluminium Concentration (2022) 2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022, DOI: 10.1109/5NANO53044.2022.9828912
    14. Husna, H.K., Nirmal, D., Merlin Gilbert Raj, S., Ajayan, J., Arivazhagan, L., Augustine Fletcher, A.S. 6 GHz GaN HEMT linear power amplifier (2021) 2021 3rd International Conference on Signal Processing and Communication, ICPSC 2021, art. no. 9451754, pp. 219-222, DOI: 10.1109/ICSPC51351.2021.9451754
    15. Manikandan, M., Nirmal, D., Dhivyasri, G., Arivahagan, L., Ajayan, J., Chandru, R., Rajeshwaran, K. Simulation analysis of UV -A band LEDs with BGaN single quantum well using SiC substrate for medical applications (2021) 2021 3rd International Conference on Signal Processing and Communication, ICPSC 2021, art. no. 9451764, pp. 312-314, DOI: 10.1109/ICSPC51351.2021.9451764
    16. Husna, H.K., Nirmal, D., Merlin Gilbert Raj, S., Ajayan, J., Arivazhagan, L., Augustine Fletcher, A.S. 6 GHz GaN HEMT linear power amplifier (2021) 2021 3rd International Conference on Signal Processing and Communication, ICPSC 2021, DOI: 10.1109/ICSPC51351.2021.9451754
    17. Manikandan M D Nirmal Prajoon P, Dhivyasri G, Chandran V “Luminous power improvement in InGaN V-Shaped Quantum Well LED using CSG on SiC Substrate” IOP Conference Series: Materials Science and Engineering, 2020, 906(1), 12011
    18. P Pavan Kumar Reddy, S Bhagya Lakshmi, L Arivazhgan, J S Raj Kumar and D Nirmal “AlGaN/GaN HEMT for highly sensitive detection of Bio-molecules using transconductance methodIOP” Conference Series: Materials Science and Engineering,doi:10.1088/1757-899X/872/1/012048
    19. Godfrey D,Godwinraj D D Nirmal N Mohan Kumar,Arivazhagan L,Wen KuanYeh “Strain-Induced Ionic Polarization Dependent AlGaN/GaN High Electron Mobility TransistorIonic Polarization Dependent AlGaN/GaN High Electron Mobility Transistor” Proceedings of the 4th International Conference on Trends in Electronics and Informatics, ICOEI 2020, 2020, pp. 463-466, 9142918, SCAD College of Engineering and Technology - 15-17 June 2020, pp. 463-466, 9142918
    20. L. Arivazhagan, Anwar Jarndal, SubhashChander, Godfrey D, Raj Kumar J S, S Bhagyalakshmi, Pavan Kumar Reddy and D Nirmal “Self-Heating Analysis of GaN-HEMT for Various Ambient Temperature and Substrate Thickness” IEEE Conference Proceedings on 2020 5th International Conference on Devices, Circuits and Systems, ICDCS20, Coimbatore, India, 5th-6th March 2020
    21. Husna Hamza K,D Nirmal and L. Arivazhagan, “Impact of AlGaN Back Barrier in AlGaN/GaNHEMT on GaN substrate” IEEE Conference Proceedings on 2020 5th International Conference on Devices, Circuits and Systems, ICDCS20, Coimbatore, India, 5th-6th March 2020
    22. Godfrey D,D Nirmal,Arivazhagan, Brigis Roy, Yu-Lin Chen, Tien-Han Yu, Wen-KuanYeh and Godwinraj D, “Investigation of AlGaN/GaNHEMT Breakdown analysis with Source field plate length for High power applications” IEEE Conference Proceedings on 2020 5th International Conference on Devices, Circuits and Systems, ICDCS20, Coimbatore, India, 5th-6th March 2020.
    23. Arivazhagan.L,D Nirmal Ajayan.J, Rajkumar.J.S, Godfry.D, Bhagya.S, “Modeling of self-heating for AlGaN/GaN HEMT with thermal conductivity degradation effect” AIP Conference Proceedings 2nd International Conference on Material Science, Smart Structures and Applications, ICMSS 2019, Erode, India, Volume 2201, 17 December 2019.
    24. Arivazhagan.L,D NirmalAjayan.J, Rajkumar.J.S, Godfry.D, Bhagya.S, “Enhancement of drain current in AlGaN/GaN HEMT using AlN passivation” AIP Conference Proceedings 2nd International Conference on Material Science, Smart Structures and Applications, ICMSS 2019, Erode, India, Volume 2201, 17 December 2019.
    25. Moni.D.J, Anucia.A.J, D.Gracia,D Nirmal“Performance Analysis of GaSb/InAs Tunnel FET for Low Power Applications” IEEE International Conference on Devices, Circuits and Systems, ICDCS 2018; Karunya University, Coimbatore, pp- 335-338.
    26. Pandit.P.P, Arivazhagan.L,D NirmalPrajoon.P, Ajayan.J, Rajkumar.J.S, “DC Performance analysis of AlGaN/GaN HEMT for future High power applications” IEEE International Conference on Devices, Circuits and Systems, ICDCS 2018; Karunya University, Coimbatore, pp- 313-318.
    27. Nisha Justeena D Nirmal, Gracia, ,”Design and Analysis of Tunnel FET using High K Dielectric Materials” IEEE International Conference on Innovations in Electrical,Electronics, Instrumentation and Media technology (ICIEEIMT’17), Karunya University, Coimbatore, pp-177-180, 4 March-2017.
    28. Pratik Pandit, Grace Jency, Monic Babu, Kishore Kumar D Nirmal Fabrication of Ultra Flexible Super Capacitor using PVdf” IEEE International Conference on Innovations in Electrical,Electronics, Instrumentation and Media technology (ICIEEIMT’17), Karunya University, Coimbatore, pp-98-102, 4 March-2017.
    29. Subash Chander, D Nirmal, Mridula Gupta, ,”30nm Normally Off Enhancement Mode AlGaN/GaN HEMT on SiC Substrate for Future High Speed Nanoscale Power applications” ” IEEE International Conference on Innovations in Electrical,Electronics, Instrumentation and Media technology (ICIEEIMT’17), Karunya University, Coimbatore, pp-293-296, 4 March-2017.
    30. AnujaMenokey, D Nirmal, Prajoon P, J Charles Pravin, “Green InGaN/GaN LEDs with n-GaN Interlayer for efficiency droop improvement” International Conference on Devices, Circuits and Systems (ICDCS’16), Karunya University, Coimbatore, pp-216-219, 3 March-2016.
    31. Charles Pravin., D.Nirmal, PrajoonP., Altrin Sharma., AnujaMenokey M “Impact of Gate Length on the Performance of a Junctionless Dual Metal Transistor with High-k dielectrics”, International Conference on Devices, Circuits and Systems (ICDCS’16), Karunya University, Coimbatore, pp-291-294, 3 March-2016.
    32. S sreeram, J Ajayan, K Vivek, D. Nirmal and V Rajesh “ A high speed 256-bit carry look ahead adder design using 22 nm strained silicon technology” IEEE Sponsored 2nd international conference on electronics and communication system ICECS-2015, Karpagam College of Engineering, Coimbatore, Tamil Nadu,26-27 Feb. 2015 pp 174 – 179.
    33. Jerrin K. Joy, D. Nirmal and P. Prajoon “Effect of quantum well thickness and molar concentration for obtaining different wavelength using AlGaAs/GaAs single quantum well LASER” IEEE sponsored 2nd international conference on electronics and communication systems (ICECS 2015), of IEEE International Conference on Electronics and Communication System ICECS’14, Karpagam College of Engineering, Coimbatore, Tamil Nadu Vol-3, (2015) pp:1738-174.
    34. Surya A, D. Nirmal and Charles Pravin “Performance enhancement of Junctionless Gate transistor with high ON/OFF ratio” International Conference on Innovation in Information, embedded and communication systems (ICIIECS-2015), Karpagam College of Engineering, Coimbatore, Tamil Nadu 19 Mar - 20 Mar 2015 pp 1-4.
    35. J. Ajayan, D. Nirmal, D. Sivaranjini, S. Sivasankari and M. Manikandan " High Performance Low Leakage power Full adder Circuit Design Using Rate Sensing Keeper" Proceedings of International Conference on Electronics and Communication Systems-ICECS-2014, Karpagam College of Engineering. Coimbatore, Tamilnadu, Feb.13,14. pp.55-59.
    36. J. Ajayan, D. Nirmal, S. Sivasankari, D. Sivaranjini and M. Manikandan " High speed Low Power Full adder Circuit Design Using Current Comparison Domino" proceedings of Second International Conference on Device Circuits and Systems-ICDCS-2014. Karunya University, Coimbatore, Tamilnadu, pp.10-14, March-6-8, 2014.
    37. Prajoon.P, D.Nirmal, Aldona Mathew, Abin George“Enhancement Mode GaN Based HEMT UsingPolarization Engineering Technique” proceedings of International Conference on Innovations in Information Embedded and Communication Systems ICIIECS’14, Karpagam College of Enginnering,Coimbatore,Tamil Nadu, March 2014 pp 208-211.
    38. A.Persiya, D.Nirmal, C.T.Sruthi “Investigation on the optical and structural properties of Thermally Evaporated tin selenide thin films for Phase Change Memory application” proceedings of International Conference on Innovations in Information Embedded and Communication Systems ICIIECS’14, Karpagam College of Enginnering,Coimbatore,Tamil Nadu, March 2014 pp 482-484.
    39. T.D.Subash, Dr.T.Gnanasekaran, J. Jagannathan, D. Nirmal “Intend and portrayal of InSb QWFET for RF application” proceedings of International Conference on Innovations in Information Embedded and Communication Systems ICIIECS’14, Karpagam College of Enginnering,Coimbatore,Tamil Nadu, March 2014 pp 787-790.
    40. Abin George, D.Nirmal, Prajoon.P,Aldona Mathew “Design and Simulation of Schottky-Source/Drain GaN/AlGaN HEMTs for Breakdown Voltage Improvemnt” proceedings of IEEE International Conference on Electronics and Communication System ICECS’14,Karpagam College of Enginnering,Coimbatore,Tamil Nadu,February 2014 pp 187-189.
    41. Aldona Mathew, D.Nirmal, Prajoon.P, Abin George “Modelling of HEMT for High Power Switching Application using Polarization Engineering Technique” proceedings of IEEE International Conference on Electronics and Communication System ICECS’14,Karpagam College of Enginnering,Coimbatore,Tamil Nadu,February 2014 pp 149-152.
    42. Surya, D.Nirmal, J.Beulah, D.Rubavathy, Daphne and J.David “ CMOS Based Instrumentation Amplifier For Neural Recording System” in First International Conference on Communication , Computation and Control held in Christian College of Engineering and technology from 11th- 13th April 2013.
    43. Annie, D.Nirmal, Sajitha Soman, Praba , Kingsly “Analysis of Gate Engineered SOI MOSFET FOR VLSI Applications” proceedings of IEEE International Muti Conference on Automation, Computing, Contral, Communication and Compressed sensing , iMac4s-2013, St. Joseph’s College of Engineering and Technology. pp 498 - 501 Palai,Kottayam,March 2013.
    44. Praba, D.Nirmal, Sajitha Soman, Annie , Kingsly “Design and Simulation of GaN/AlGaN HEMTs with Low Leakage Current and High ON/OFF Current Ratio” proceedings of IEEE International Muti Conference on Automation, Computing, Contral, Communication and Compressed sensing , iMac4s-2013, St. Joseph’s College of Engineering and Technology. PP 490 - 493 Palai,Kottayam,March 2013.
    45. Sajitha Soman, D.Nirmal, Praba, Annie , Kingsly “Analysis of Drain Current in Short Channel Drain Extented Tripal Gate FinFETs” proceedings of IEEE International Muti Conference on Automation, Computing, Contral, Communication and Compressed sensing , iMac4s-2013, St. Joseph’s College of Engineering and Technology. PP 494 - 497 Palai,Kottayam,March 2013.
    46. D.Nirmal, Vijayakumar, DoreenJoy, Binola k Jebalin, and N.Mohankumar “Nanoscale Tri Gate MOSFET for Ultra Low Power Applications Using High-k Dielectrics ” 5th IEEE International Nanoelectronics Conference, IEEE INEC 2013 will be held in Singapore, on 2nd – 4th January 2013
    47. D.Nirmal, ShevinBobinVarughese, DoreenJoy, FlaviaPrincess, and P.Vijayakumar “Design and simulation of ALGaN/GaNHFET” 2012 International Conference on Devices , Circuits and Systems (ICDCS) Proceedings,Karunya university Page. 199-201,2012.
    48. D.Nirmal, DoreenJoy, ShevinBobinVarughese, FlaviaPrincess, and P.Vijayakumar “Low power analysis of triple gate MOSFET” 2012 International Conference on Devices , Circuits and Systems (ICDCS) Proceedings, Karunya university Page. 126-129,2012.
    49. FlaviaPrincess, P.Sindhu,M.Manikandan,V.LaksmiPrabha and D.Nirmal “Mixed mode simulation of SRAM FINFETs” 2012 International Conference on Devices , Circuits and Systems (ICDCS) Proceedings,Karunya university Page. 280-283,2012.
    50. D. Nirmal, P.Vijaya Kumar, Patrick Chella Samuel, Shruti K, Divya Mary Thomas & N. Mohankumar “Analysis Of Dual Gate Mosfets Using High K Dielectrics” 2011 3rd IEEE International Conference on Electronics Computer Technology (ICECT 2011)Proceedings, page VI:22-25.
    51. D. Nirmal, P.Vijaya Kumar, Shruti K, Divya Mary Thomas, Patrick Chella Samuel & N. Mohankumar “Analysis Of Single Halo Double Gate Mosfets Using High-K Dielectrics” 2011 3rd IEEE International Conference on Electronics Computer Technology (ICECT 2011)Proceedings, page VI:26-30.
    52. D. Nirmal, P.Vijaya Kumar, Divya Mary Thomas, Shruti K, Patrick Chella Samuel & N. Mohankumar “Impact of Gate Engineering on Double Gate MOSFETs using High-k Dielectrics” 2011 3rd IEEE International Conference on Electronics Computer Technology (ICECT 2011)Proceedings, page VI:31-34.
    53. D. Nirmal, Divya Mary Thomas, Shruti K, Patrick Chella Samuel, Vijaya Kumar& N. Mohankumar “ Analysis of Dual Material FinFETs using High-k Dielectrics” International Conference on Communication and Signal processing ICCOS 2011 Karunya University, Coimbatore-641 114. 17-18, March 2011
    54. D.Nirmal, Nalini, Vijayakumar “Nanosized High K Dielectric Material For Finfet” ICE(International conference for Electro ceramics) , Delhi University, India, 13-17, Dec 2009.
    55. D.Nirmal, Vijayakumar, Rekha, Soumya “Impact Of High-K Dielectrics On Device Performance Of SOI FinFETS” ISCO(4th international conference on intelligent systems and control), karpagam college of engineering, India, 4th and 5th , Feb 2010.
    56. D.Nirmal, Vijayakumar, Rekha “High-K Dielectrics On FinFETs Device Performance Using TCAD” International Conference on Emerging Trends in Engineering Technologies ICETS, Noorul Islam university,India, 25 & 26, March 2010.
    57. D.Nirmal, Vijayakumar, Soumya “Device Design And Optimization Of Nanoscale FinFETs Using TCAD” International Conference on Emerging Trends in Engineering Technologies ICETS, Noorul Islam university,India, 25 & 26, March 2010

    “ Research Publication In National Conference ”

    Professor D.Nirmal

    1. Nirmal, Vijayakumar et,al. “ ANALYSIS OF ANALOG PARAMETERS USING MULTI GATE FET” 3rd National Conference on Signal Processing, Communications and VLSI Design (NCSCV ’11) Anna university of Technology coimbatore.6th & 7th May 2011. pp. 35-39.
    2. Nirmal, Vijayakumar, Samjebaraj, Christopher, Arockia, Sunil “FinFETs For Future Nano Scale Technology” National Conference on the theme ‘Emerging trends in RF and Signal Processing FISAT , Kerala,India, 25-27, March 2010,pp. 161-165.
    3. Nirmal, Vijayakumar, Samjebaraj, Christopher, Arockia, Sunil “CMOS logic design with Double Gate Transistors” National Conference on VLSI,Image processing and Wireless communication ARASU Engineering College, India 20th March 2010,pp.1-7.
    4. Nirmal, Vijay “Implementation of Low Power Circuits Using FinFETs” National Conference on Microwave and Optical Communication, Alagappa Chrttiar College Of Engineering And Technology, India,2009.
    5. Nirmal, Jackuline Moni “Floorplanning Based on Btree* and simulated Annealing” National conference on Modeling, Analysis and Simulation of Computer and Telecommunication systems, Government College Of Engineering Salem, India,2007.

    Teaching

    The contagious energy share in the classroom brings new ideas and clarity of thought to my research. But the aspect of teaching I have come to cherish the most is the feeling of restoring hope and giving direction to struggling students.

    My biggest challenge is to inspire students to focus on studying our course material by explaining first-hand its practical benefits with clear, real-life examples and case studies. Many students feel lost, swept up in searching for their place in society and purpose in life, and this at-times overwhelming philosophical venture can easily dampen their enthusiasm for the learning experience. To keep them grounded and on-track for success, I balance lecture with discussion and group work.

    Our society can improve the lives of future generations by better preparing them for holistic success. This effort demands refining our pedagogy, and ultimately our education system. I therefore hope to continue teaching, as well as advancing personal research projects, to contribute to social progress and the betterment of our world.

    Teaching Subjects:

    • VLSI Technology

      CMOS VLSI Technology

      Nanoelectronics.

      Solid State Device Modeling

      Microelectronics

      Solid State Electronics

      Electron Devices

      Microwave and Optical Engineering

    International / National Resource Person

    The following is a list of selected publications. For a complete list please download my CV.

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    International / National Resource Person

    Professor Nirmal

  • Resource Person for DRDO sponsored Nation seminar on ‘3D Monolithic, Microwave Integrated Circuits Design Fabrication and Applications, conducted on November 09, 2022 at Dhanalakshmi Srinivasan College of Enginneirng, Coimbatore.
  • Resource Person for IEEE Day seminar on ‘Electronic materials, devices and Systems for Beyond 5G systems’ conducted on September 19,2022 at Karpagam College of Engineering , Coimbatore.
  • Resource Person on ‘Workshop on Manuscript Preparation and Submisison’ conducted on September 13,2022 at Avinashilingam Institute for Home Sciences and Higher Education for women , Coimbatore
  • Resource Person for the Guest lecture on ‘Werable sensor devices’ conducted on September 10,2022 at Karpagam Institute of Technology , Coimbatore
  • Resource Person for the Anna University sponsored FDP on ‘Electronics Packing and Testing, conducted on Auguest 08,2022 at KPR Institute of Engineering and Technology , Coimbatore
  • Resource Person for the lecture on ‘Memory Core and Memory Peripheral Security, in the FDP conducted on January19,2022 at PSNA College of Technology, Dindigul
  • Resource Person for the lecture on ‘Electronics System Design and Manufacturing in Technology Node Perspective and Blended Research Outputs Metrics’,conducted on January20,2022 at United Institute of Technology, Coimbatore.
  • Exceptional contribution as Primary Evaluator in the Toycathon 2021 conducted by Ministry of Education Innovation Cell.
  • Resource Person for the workshop on ‘NanoMaterials & Devices: Physics and Applications’,conducted on March 11th and 12th at VIT Chennai.
  • Keynote talk on “Sustainable Electronic system in current trends” at the 6thInternational Conference on Inventive Computation Technologies(ICICT-2021) organized by RVS Technical Campus, Coimbatore, Tamilnadu, India, on 21.01.2021.
  • Resource Person in the 2 Day Online Faculty Development Program on Future Perspective of Semiconductor Devices organized by Kalasalingam Academy of Research and Education on 22-24 June 2021
  • Keynote talk in the 2nd International Conference on Electronics and Sustainable Communication Systems held at Hindustan Institute of Technology and Sciences, Coimbatore, India on 04 August 2021
  • Resource Person in the 2 Day National Level workshop on Modelling of semiconductor Quantum Devices for a Sustainable Energy System using TCAD” organized by Kalasalingam Academy of Research and Education on 08 January 2021
  • Keynote address on “Sustainable Electronic System in Current Trends” in6thInternational conference on Inventive Computation Technologies (ICICT-2021) held RVS Technical Campus, India 21 January 2021
  • Resource person in the Faculty Development Program on “Innovative Research Approach for Cutting Edge Program” in Bethalahem Institute of Engineering, Indiaon 19 November 2020
  • Delivered a talk in Faculty Development program on “Smart materials and sensors: Current updates and future perspective” organized by Stella mary’s college of Engineering and Technology, India on 11th July 2020
  • Keynote address on “Electronic Devices to Circuits systems” in International conference on Electronic and Sustainable communication systems held Hindusthan Institute of Technology and sciences, India 2nd , July 2020.
  • Delivered a talk in webinar on “Nanoelectronics and its trending applications” organized by Galgotias University, Delhi on 22th June 2020
  • Delivered a talk in webinar on “Current Trending Devices for 5G Communication” organized by Department of ECE, Kumaraguru College of Technology, Coimbatore on 28th June 2020
  • Resource person in the National level Three Day Online Faculty Development Program “VLSI technology and hardware for AI and ML” in GMR Institute of Technology, Rajam during 25th to 27th May 2020
  • Delivered a talk in Faculty orientation program on “ Future perspective in Research Mobilization” on 13th , January 2020 in KPR Institute of Engineering and Technology.
  • Resource person in the Guest lecture on “ VLSI and its Applications ” on 09th ,January 2020 in Avinashilingam Institute for Home Science and Higher Education for Women.
  • Resource person in AICTE sponsored Short Term training programm and delivered a lecture on “Recent GaN power process for 5G applications” on 20st August 2019 in PSNA College of engineering and Technology.
  • Keynote address on “Silicon based Energy harvesting devices” in International conference on communication and electronic systems held PPG institute of Technology, India 17th , July 2019.
  • Delivered a talk in Faculty development program on “Bio medical solutions: Integrating new chips, Packages & Modules ” held in Jyothi Engineering college, Kerala, India on 10th July 2019.
  • Resource person in AICTE Sponsored Two week faculty development program and delivered a talk on “Wearable and implantable Technologies” held in Vimal Jyothi Engineering college, Kerala, India on 25th May 2019.
  • Keynote address on “Nanogenerators for energy harvesting applications” in International conference on Intelligent computing and control systems held Vaigai College of Engineering, India 15th , May 2018.
  • Delivered a technical talk on “Semicondcutor Devices and its recent trends” in IEEE Madras section symposium held in Sri Ramakrishna Engineering College, Coimbatore on 25th January 2018.
  • Keynote address on “Semiconductor devices and its applications” in 3rd IEEE International conference on Inventive systems and control held in JCT College of Engineering and Technology, India 11th , January 2018.
  • Guest Speaker on “ Current Trends in Semicondcutor Devices ” in Francis Xavier Engineering College, Tirunelveli on 10th January 2018
  • Keynote address on “Electronic system design and its reliability issues” in “ 3rd IEEE International conference on Communication and Electronic systems held in PPG Institute of Technology, India 15th and 16th, October 2018.
  • Delivered Guest Lecture on “ Technology node beyond 14nm in VLSI Systems” in Vellor Institute of Technology, Vellore on 19th September 2018.
  • Keynote address on “InP based HEMT and its frequency applications” in IEEE Sponsored International conference on Inventive research in computing applications Organized by RVS technical campus coimbatore, India on 2nd July 2018.
  • Guest Lecture on “ Emerging semiconductor devices and its applications” in Shaheed Rajguru college of applied sciences for women, University of Delhi , Delhi on 4th April 2018.
  • Speech Delivered on “ Flexible electronics and future systems” in Institution of Engineers(India), Coimbatore chapter , Coimbatore on 12th February 2018.
  • Keynote address on “Flexible semiconductor devices and its applications in future” in IEEE Sponsored 2nd International conference on Inventive systems and control held in JCT College of Engineering and Technology, India 19th , January 2018.
  • Guest Lecture on “ Recent Advancements in Electronics and Research opportunities in semiconductor devices” in Kumarguru college of Technology , Coimbatore on 22nd November 2017.
  • Keynote address on “Impact of High Electron Mobility Transistor in MMIC Systems” in IEEE Sponsored 2nd International conference on Communication and Electronic systems held in PPG Institute of Technology, India 19th , October 2017
  • Resource person in the CSIR sponsored National seminar and delivered a lecture on “Analysis of Carbon Nanotube and Graphene Nanoribbon Field Effect Transistors” on 21st August 2017 in Karpgam college of engineering.
  • Keynote address on “Current Trends in Junctionless Transistors for Ultra Low power Applications” in IEEE Sponsored International conference on Inventive systems and Control Organized by JCT College of Engineering and technology, India on 19th January 2017.
  • Delivered a Talk on “Semiconductor Devices and Applications ” in One day IEEE ED Coimbatore Chapter sponsored workshop “ 2nd National Workshop on Semiconductor device modeling and applications” in Karunya University, 11th January 2017.
  • Guest Lecture on “ NPN and PNP Junctions” in FDTP ON Electron Devices organized by Karpagam Institute of Technology , Coimbatore on 23th December 2016.
  • Invited talk on “ Semiconductor Nano Electronic Devices and its applications for Future Electronics” in National seminar on MEMS and Nano Electronic Devices held on 19th and 20th December 2016 in Bharathiar University, India.
  • Delivered a Keynote address on “Nanoscale Junctionless Transistor Design and Its Applications ” in the IEEE International Conference on Communication and Electronics Systems(ICCES 2016) Organized by PPG Institute of Technology - Coimbatore, India on 21st October 2016.
  • Resource person in the TEQIP-II sponsored faculty development program on “Multiscale modelling and simulation of Nanoelectronic Devices- A research Perspective” on 28th July 2016 in PSG college of Technology.
  • Delivered a Keynote address on “GaN based High Electron Mobility Transistor (HEMT): Trends and applications” in the IEEE sponsored International conference on Electronics and Communication Systems Organized by Karpagam College of Engineering, India on 25th February 2016.
  • Resource person for a seminar on “Research paper writing: Methodology & Aspect” held on 17th February, organized by Department of Electronics and communication Engg ECHO association, Karunya University.
  • Delivered a Keynote address on “Emerging trends in Nanotechnology and Integrated circuits” in National Level Workshop on Recent trends of Nanotechnology in Electronics held at Arasu Engineering College, India on 8th February 2016.
  • Delivered a Technical Talk on “Introduction to High Power & Low Power Devices in Nanotechnology” in Alva’s Institute of Engineering and Technology, India on 06thNovember 2015.
  • Resource person for IEEE EDS Coimbatore chapter sponsored workshop on “National Semiconductor device modeling and applications” in Karunya University, 9th October 2015
  • Delivered a lecture on “VLSI Technologies and research Trends” in Royal college of Engineering and technology, India on 14th August 2015
  • Keynote address in the “International conference on Systems, Science, Control, Communication, Engineering and Technology” on Next Generation Electronics and its Applications Organized by Karpagam Institute of Technology, India on 10th August 2015
  • Keynote address in the International conference on Networks, Electronics, Communication and Control” on Heterostructure based MOSFETs in Nanoelectronic Regime Organized by Cape Institute of Technology, India on 5th and 6th March 2015.
  • Keynote address in the IEEE 9th International conference on Intelligent Systems and Control On “Advanced high power semiconductor devices and its application “Organized by Karpagam college of Engineering, India on 9th and 10th January 2015.
  • Delivered a plenary talk in the IEEE SSCS Sponsored Conference On “Solid State Circuits” Organized by SaintGits college of Engineering, India on 29th August 2014.
  • Resource person for IEEE India EDS chapter sponsored workshop on “ Nano Electronics Device Modelling” in Mahendra Engineering College on 14th July 2014.
  • Delivered a Talk on “ Nanoelectronics in recent trends” in Reva ITM,Bangalore India on 24th March 2014.
  • Delivered a Special Guest lecture on “ VLSI Design” in Pavai College of Technology, India on 28th January 2014.
  • Delivered a Guest lecture in IETE Student forum inauguration on “ Nanoelectronics in Communication systems” in Karpagam college of Engineering, India on 30th September 2013.
  • Delivered a special lecture in One day seminar on “Advanced Research Methodologies in VLSI System” in Cape Institute of Technology , India on 12th August 2013.
  • Delivered a Keynote Talk in 2013 IEEE International Conference on Emerging Trends in Computing, Communication and Nanotechnology Organized by Infant Jesus College of Engineering, India on 25th and 26th March 2013.
  • Resource person in “Workshop for Writing Journal Papers” at Karunya University, Coimbatore on 6th March 2013.
  • Guest Lecture on “ Emerging Trends in NanoElectronics for VLSI Applications” in Paavai College Of Engineering, Namakkal on 12th February 2013.
  • Technical Talk On “Emerging Engineering Technologies Using FinFET With High-K Dielectrics” in the IEEE INDIA EDS chapter workshop on FinFET Circuit Design-An Alternate for CMOS Design conducted in Muthayammal Engineering College, Rasispuram, India 2012.
  • Guest lecture in National workshop on “Low power VLSI methodologies” organized by Hindustan Institute Of Technology, Coimbatore conducted on 24th April 2010.
  • Resource person for National Workshop “Find Your way with Wonder Chip: VLSI” organized by Karunya University conducted from 19th of September 2009 to 21st of September 2009.
  • Delivered a Invited lecture on the topic “INTRODUCTION TO SYNOPSYS” in Karunya University.

    • International Conference Resource Person

    Professor D.Nirmal

  • Technical Reviewer for the manuscripts submitted for the IEEE Madras Section International Conference 2021 (MASCON2021) held at Hotel Le-Royal Meridien, Chennai, Tamil Nadu, India during 27th-28th August 2021.
  • Session Chair in the “ 2nd International conference on VLSI Devices, Circuits and Systems” held in Meghnadsaha Institute of Technology Kolkata, India 18th and 19thJuly 2020.
  • Sharing in the “VIRTUAL CONFERENCE ORGANIZERS’ PANEL” held in IEEE Bangladesh Section,Bangladesh1st and 2nd July 2020.
  • Session Chair in the “IEEE Sponsored 4th International conference on Communication and Electronic systems” held in PPG Institute of Technology, India. 17th July 2019.
  • Session Chair in the 2019 International Conference on Computer Communication and Informatics (ICCCI 2019) Organized by Sri Shakthi Institute of Engineering and Technology - Coimbatore, India on 23th -25th January 2019.
  • Session Chair in the “ 3rd IEEE International conference on Communication and Electronic systems” held in PPG Institute of Technology, India 15th and 16th, October 2018.
  • Session Chair in the 2018 International Conference on Computer Communication and Informatics (ICCCI 2017) Organized by Sree Shakthi Institute of Engineering and Technology - Coimbatore, India on 5th January 2018.
  • Session Chair in the “ IEEE Sponsored 2nd International conference on Communication and Electronic systems” held in PPG Institute of Technology, India 19th , October 2017.
  • Session Chair in the “ IEEE Sponsored International conference on Signal processing and communication” held in Karunya University, India 28th , July 2017.
  • Session Chair in the “ IEEE Sponsored International conference on Innovations in Electrical ,Electronics, Instrumentation and Media Technology” held in Karunya University, India 4th , February 2017
  • Session Chair in the IEEE Sponsored International conference on Inventive systems and Control Organized by JCT College of Engineering and technology, India on 19th January 2017.
  • Session Chair in the 2017 International Conference on Computer Communication and Informatics(ICCCI 2017) Organized by Sree Shakthi Institute of Engineering and Technology - Coimbatore, India on 7th January 2017.
  • Session Chair in the IEEE International Conference on Communication and Electronics Systems(ICCES 2016) Organized by PPG Institute of Technology - Coimbatore, India on 21st October 2016.
  • Session Chair in the IEEE International Conference on Inventive Computation Technologies(ICICT 2016) Organized by RVS Technical Campus- Coimbatore, India on 26 th to 27th August 2016.
  • Session Chair in the IEEE EDS and IETE sponsored 3rd International Conference on Devices, Circuits and Systems Organized by Karunya University, India on 3rd to 5th March 2016.
  • Session Chair in the IEEE sponsored International conference on Electronics and Communication Systems Organized by Karpagam College of Engineering, India on 25th February 2016.
  • Session Chair in the International conference on Systems, Science, Control, Communication, Engineering and Technology Organized by Karpagam Institute of Technology, India on 10th August 2015.
  • Session Chair in the International conference on Networks, Electronics, Communication and Control” Organized by Cape Institute of Technology, India on 5th and 6th March 2015.
  • Session Chair in the IEEE 9th International conference on Intelligent Systems and Control” Organized by Karpagam college of Engineering, India on 9th and 10th Janyary 2015.
  • Session Chair in the IEEE SSCS Sponsored Conference On “Solid State Circuits” Organized by SaintGits college of Engineering, India on 29th August 2014.
  • I have served as a organizing secretary of 2nd International conference on Devices, Circuits and Systems sponsored by IEEE EDS INDIA and IETE INDIA March 6th to 8th 2014.
  • Session Chair in the International Conference Innovations in Information, Embedded and Communication systems Organized by Karpagam college of Engineering, India on 13th and 14th of March 2014.
  • Session Chair in the International Conference on Devices circuits and systems Organized by Karunya University, India on 6th to 8th March, 2014.
  • Session Chair in the International Confernce on Electronics and Communication Systems Organized by Karpagam college of Engineering, India on 13th and 14th of February 2014.
  • I have served as a organizing secretary of International conference on Devices, Circuits and Systems sponsored by IEEE EDS INDIA and IETE INDIA March 15th and 16th 2012.
  • Session Chair in the International Confernce on Innovations in Intelligent Instrumentation , Optimization and Signal Organized by Karunya University, India on 1st March 2013.
  • Session Chair in the IEEE International Multi Automation, Computing, Control, Communication and Compressed Sensing Organized by St.Joseph’s College of Engineering and Technology, Kerala, India on 22th and 23th March 2013.
  • Session Chair in the 2013 IEEE International Conference on Emerging Trends in Computing, Communication and Nanotechnology Organized by Infant Jesus College of Engineering, India on 25th and 26th March 2013.

    • National Conference Resource Person :

    Professor D.Nirmal

  • Session Chair in the National Conference on Innovations in future communication Technologies, (NCIFCT’17) Organized by Karunya university, India on 30th March 2017.
  • Session Chair in the Fourth National Conference on Communication, Computation, Control and Automation,CCCA2014 Organized by Sri Ramakrishna Institute of Technology, India on 28th and 29th March 2014.

    • Professional Society Activities

    Life Member of ISTE(Indian Society for Technical Education)

    Fellow of IETE (The Institution of Electronic and Telecommunication Engineers) M-215257

    Senior Member of IEEE (Institute of Electrical and Electronics Engineering)

    Life Member of ISTE(Indian Society for Technical Education)LM-56881

    Member of VSI (VLSI Society Of India)

    Life Member of SSI(Semiconductor Society of India)

    Member of Institute of Engineers (India)M-1544705.

    Life Member of IETE (The Institution of Electronic and Telecommunication Engineers)

    Life Member of IAENG(International Association for engineers)

    Member of IACSIT(International Association Of Computer Science And Information Technology)

    Member of ACCENT (Association of Computer Communication Education for National Triumph Social and Welfare Society)

    About Me & Contact

    Dr. D. Nirmal has obtained his Bachelor of Engineering in Electrical and Electronics Engineering from Anna University Chennai and M.Tech in VLSI Design from Karunya Institute of Technology and Sciences. He has received Ph.D in Information and Communication Engineering from Anna University. He is presently working as an Professor, Associate Dean-Engineering & Technology, Karunya Institute of Technology and Sciences, Coimbatore. His research interests includes Nanoelectronics, 1D/2D Materials, Carbon nanotubes, GaN Technology, VLSI Technology, NanosacleDevice Modelling and Simulation – HEMT, FINFET, LED, Energy Storage Devices,GSI, Sensors. He is a NAAC Assessor for the Government of India, actively involved in the quality assurance and accreditation of higher education institutions across the country. In addition, he holds the position of R10 IEEE EDS SRC Chair within the IEEE Electron Devices Society in the Asia-Pacific region. He has completed a project funded by DRDO and Ministry of Electronics and Information Technology, Government of India and currently handling a funded project from ISRO,Department of Space and AICTE(All India Council of technical Education).
    He has published more than 180 research papers.Currently he is a Chair of IEEE EDS Coimbatore chapter Madras Section and Member of IEEE Electron Device society VLSI Technology and Circuits committee. He is a recipient of several awards for his credits to name few Young Scientist Award 2019 from the Academy of SciencesChennai, Institution of Engineers India Young Engineers Award- Electronics and Telecommunication Engineering- 2017,Shir.P.K.Das Memorial Best Faculty Awardand many more. He an Editor for several International Journals and reviewer for many IEEE Transactions for his research credits. He also a Senior IEEE member, Life member of ISTE , Member of IETE and also Member of IEI. He has delivered many Keynote address and lectures in National and International conferences/programs.

    Office Address

    Dr.D.Nirmal,M.E, Ph.D.,SMIEEE.,LMIETE.,MISTE.,

    Professor, Associate Dean-School of Engineering & Technology,

    Karunya Institute of Technology and Sciences.

    Phone Number

    Office : +91- 422 – 2614388

    Mobile: +919789498810

    Fax Number

    Office : +91 – 422 - 2615615

    E mail

    dnirmalphd@gmail.com

    nirmal@karunya.edu



    Contact & Meet Me

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    •            

    Office:

    •    +91 – 422 - 2615615